solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sdr62 __ __ __ screening 2 / __ = not screened tx = tx level txv = txv s = s level package 59 = to-59 voltage 0 = 100 v 1 = 150 v 2 = 200 v sdr620/59 sdr621/59 sdr622/59 20 amps 100 - 200 volts ultra fast recovery rectifier features: ? isolated package ? reverse recovery time 35 ns max ? piv 200 volts ? low reverse leakage ? hermetically sealed ? single chip construction ? -65oc to 200oc operating and storage temperature ? isolated version of 1n5812-16 do-4 ? tx, txv, and s-level screening available 2 / maximum ratings 3 / symbol value units peak repetitive reverse voltage and dc blocking voltage sdr620 sdr621 sdr622 v rrm v r 100 150 200 volts half wave rectified forward current, averaged over full cycle resistive load, 60 hz, sine wave, t c = 55oc i o 20 amps peak repetitive forward current 8.3 ms pulse, allow junction to reach equilibrium between pulses i frm 80 amps peak surge current 8.3 ms pulse i fsm 200 amps thermal resistance junction to case r ? jc 1.5 oc/w operating and storage temperature t j & t stg -65 to +200 oc 1 / for ordering information, price, operating curves, and availability- contact factory. 2 / screened to mil-prf-19500. 3 / unless otherwise specified, all electrical characteristics @ 25oc. to-59 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0117b doc
electrical characteristics 1 / symbol minimum maximum unit instantaneous forward voltage drop 300 ? 500 s pulse i f = 10a i f = 20a v f1 v f2 ? ? 1.2 1.5 v dc instantaneous forward voltage drop i f = 10 a, 300 ? 500 s pulse t a = 100oc t a = -55oc v f3 v f4 ? 1.15 1.25 v dc reverse leakage current rated v r , 300 s pulse min. t a = 25oc t c = 100oc i r1 i r2 ? ? 10 1.0 a ma junction capacitance v r = 10 v dc , f= 1 mhz c j ? 225 pf reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr ? 35 nsec notes: 1/ unless otherwise specified, a ll electrical characteristics @ 25oc 2/ for information on curves , contact the factory representa tive for engineering assistance. package outline: to-59 2 pin pin out: pin 1: anode pin 3: cathode solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr620/59 sdr621/59 sdr622/59 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0117b doc
s olid state devices in c . 14701 firestone, la mirada, ca 90638 data sheet approval form data sheet number rc0117 rev b custom data sheet, do not put on web part number(s): sdr620/59, sdr621/59, sdr622/59 approval sign date engineering manager: dan tulbure 12/12/07 executive / ceo arnold n. applebaum 06/04/08 operation manager: joel mearig 06/04/08 marketing manager: sharon pfifer 06/04/08 quality manager: brian e. green 06/04/08 device category rectifier schottky bridge zener & tvs thyristor fet & igbt transistors ic & vreg power module hf standard doubler & ct zener scr n fet npn <1 w vreg (adj) high voltage x uf super (<25v) single temp comp triac pfet npn > 1w vreg (fixed) fet & igbt bridges f sic three tvs (< 4kw ) trigger devices radfet npn > 400 v ic battery bypass std mult tvs ( > 4kw) jfet pnp < 1w dc - dc converter hv >2.5kv n igbt pnp >1 w other hc >200a n igbt +diode pnp >400v pin p igbt comp pair p igbt +diode data sheet developmental notes uc15s20 per id#3331/7198 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0117b doc
s olid state devices in c . 14701 firestone, la mirada, ca 90638 data sheet # rc0117 eco # rev date description approval ---- a 12/04/07 initial release. beg e-100386 b 07/01/10 i fsm = 200a; r ? jc = 1.5oc/w, v f1 = 1.2v, v f2 = 1.5v, v f3 = 1.15v ib q312rd revisions note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0117b doc
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